Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Semiconductor Science and Technology

Volumn 26, Issue 3, 2011, Pages

  Yoon, Sung Min ^a   Yang, Shinhyuk ^a   Byun, Chun Won ^a   Jung, Soon Won ^a   Ryu, Min Ki ^a   Park, Sang Hee Ko ^a   Kim, Byeong Hoon ^a   Oh, Himchan ^a   Hwang, Chi Sun ^a   Yu, Byoung Gon ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; DEVICE STRUCTURES; FERROELECTRIC GATE INSULATORS; FLEXIBLE AND TRANSPARENT ELECTRONICS; MEMORY ARRAY; MEMORY DEVICE; NON-VOLATILE MEMORIES; ORGANIC-INORGANIC HYBRID; PROCESS OPTIMIZATION; TECHNOLOGY ISSUES;

FERROELECTRICITY; FLEXIBLE ELECTRONICS; OPTIMIZATION; THIN FILM TRANSISTORS;

FERROELECTRIC DEVICES;

EID: 79951896254     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/3/034007     Document Type: Article

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