All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator

Advanced Materials

Volumn 16, Issue 7, 2004, Pages 633-636

  Schroeder, Raoul ^a   Majewski, Leszek A ^a   Grell, Martin ^a  

^a Hicks Building ^*  (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CAPACITORS; CRYSTALLINE MATERIALS; CRYSTALLIZATION; DATA STORAGE EQUIPMENT; ELECTRODES; FERROELECTRIC MATERIALS; POLARIZATION; QUENCHING; SEMICONDUCTING ORGANIC COMPOUNDS; THERMODYNAMIC STABILITY;

FLEXIBLE SUBSTRATES; ORGANIC FIELD EFFECT TRANSISTORS (OFET); RADIO FREQUENCY IDENTIFICATION (RFID); THERMODYNAMIC PHASES;

GATES (TRANSISTOR);

EID: 2442495340     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200306187     Document Type: Article

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