Organic thin-film transistor memory with nanoparticle floating gate

IEEE Transactions on Electron Devices

Volumn 56, Issue 5, 2009, Pages 1036-1039

  Wang, Wei ^a,b   Shi, Jiawi ^b   Ma, Dongge ^a  

^a CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

Memory; Nanoparticle floating gate; Organic thin film transistor (OTFT)

Indexed keywords

CHARGE TRAP; FLOATING GATES; GLASS SUBSTRATES; HYSTERESIS BEHAVIOR; MEMORY; MEMORY DEVICE; MEMORY OPERATIONS; NYLON-6; ORGANIC THIN FILM TRANSISTORS; ORGANIC THIN-FILM TRANSISTOR (OTFT); THERMAL DEPOSITION;

CURRENT VOLTAGE CHARACTERISTICS; GATE DIELECTRICS; GATES (TRANSISTOR); NANOPARTICLES; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

SILVER;

EID: 67349089495     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2016031     Document Type: Article

References (21)

1. H. E. A. Huitema, G. H. Gelinck, and J. B. P. H. vander Puten, "Polymer electronics: Plastic transistors in active-matrix displays," Nature vol. 414, no. 6864, pp. 599-602, Dec. 2001.
2. L. Zhou, A. Wanga, and S. C. Wu, "All-organic active matrix flexible display," Appl. Phys. Lett., vol. 88, no. 8, p. 083 502, Feb. 2006.
3. Z. Zhu, J. T. Mason, R. Dieckmann, and G. G. Malliaras, "Humidity sensors based on pentacene thin-film transistors," Appl. Phys. Lett. vol. 81, no. 24, pp. 4643-4645, Dec. 2002.
4. G. Darlinski, U. Bottger, and R. Waser, "Mechanical force sensors using organic thin-film transistors," J. Appl. Phys., vol. 97, no. 9, p. 093 708, May 2005.
5. C. J. Drury, C. M. J. Mutsaers, C. M. Hart, M. Matters, and D. M. Deleeuw, "Low-cost all-polymer integrated circuits," Appl. Phys. Lett., vol. 73, no. 1, pp. 108-110, Jul. 1998.
6. B. Crone, A. Dodabalapur, Y.-Y. Lin, R. W. Filas, Z. Bao, A. LaDuca, R. Sarpeshkar, H. E. Katz, and W. Li, "Large-scale complementary integrated circuits based on organic transistors," Nature, vol. 403, no. 6769, pp. 521-523, Feb. 2000.
7. G. Velu, C. Legrand, O. Tharaud, A. Chapoton, D. Remiens, and G. Horowitz, "Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator," Appl. Phys. Lett. vol. 79, no. 5, pp. 659-661, Jul. 2001.
8. K. N. N. Unni, R. de Bettignies, S. Dabos-Seignon, and J.-M. Nunzi, "A nonvolatile memory element based on an organic field-effect transistor," Appl. Phys. Lett., vol. 85, no. 10, pp. 1823-1825, Sep. 2004.
9. R. C. G. Naber, C. Tanase, P. W. M. Blom, G. H. Gelinck, A. W. Marsman, F. J. Touwslager, S. Setayesh, and D. M. de Leeuw, "High-performance solution-processed polymer ferroelectric field-effect transistors," Nat. Mater., vol. 4, pp. 243-248, 2004.
10. K. N. N. Unni, R. de Bettignies, S. Dabos-Seignon, and J.-M. Nunzi, "A nonvolatile memory element based on a quaterthiophene field-effect transistor," Mater. Lett., vol. 59, no. 10, pp. 1165-1168, Apr. 2005.
11. R. C. G. Naber, B. de Boer, P. W. M. Blom, and D. M. de Leeuw, "Low-voltage polymer field-effect transistors for nonvolatile memories," Appl. Phys. Lett., vol. 87, no. 20, p. 203 509, Nov. 2005.
12. F. A. Yildirim, C. Ucurum, R. R. Schliewe, W. Bauhofer, R. M. Meixner, H. Goebel, and W. Krautschneider, "Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors," Appl. Phys. Lett., vol. 90, no. 8, p. 083 501, Feb. 2004.
13. R. Schroeder, L. A. Majewski, and M. Grell, "All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator," Adv. Mater., vol. 16, no. 7, pp. 633-636, Apr. 2004.
14. T. B. Singh, N. Marjanovic, G. J. Matt, N. S. Sariciffci, R. Schwodiauer, and S. Bauer, "Nonvolatile organic field-effect transistor memory element with a polymeric gate electret," Appl. Phys. Lett. vol. 85, no. 22, pp. 5409-5411, Nov. 2004.
15. P. Pavan, R. Bez, P. Olivo, and E. Zanoni, "Flash memory cells - An overview," Proc. IEEE, vol. 85, no. 8, pp. 1248-1271, Aug. 1997.
16. J. G. Simmons, "Poole-Frenkel effect and Schottky effect in metal-insulator-metal systems," Phys. Rev., vol. 155, no. 3, pp. 660-675, 1967.
17. S. J. Baik and K. S. Lim, "Characteristics of silicon nanocrystal floating gate memory using amorphous carbon-SiO2 tunnel barrier," Appl. Phys. Lett., vol. 81, no. 27, pp. 5186-5188, Dec. 2002.
18. Y. Kuo and H. Nominanda, "Nonvolatile hydrogenated-amorphoussilicon thin-film-transistor memory devices," Appl. Phys. Lett., vol. 89, no. 7, p. 073 503, Aug. 2006.
19. Z. Liu, F. Xue, Y. Su, Y. M. Lvov, and K. Varahramyan, "Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric," IEEE Trans. Nanotechnol., vol. 5, no. 4, pp. 379-384, Jul. 2006.
20. L. Zhen, W. Guan, L. Shang, M. Liu, and G. Liu, "Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric," J. Phys. D, Appl. Phys., vol. 41, no. 13, p. 135 111, Jul. 2008.
21. W. Wang, J. Shi, S. Guo, H. Zhang, B. Quan, and D. Ma, "Improved performance by a double-insulator layer in organic thin-film transistors," Chin. Phys. Lett., vol. 23, no. 11, pp. 3108-3110, Nov. 2006.