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Volumn 97, Issue 5, 2010, Pages

Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

(7) Fortunato, Elvira a Barros, Raquel a,b Barquinha, Pedro a Figueiredo, Vitor a Park, Sang Hee Ko c Hwang, Chi Sun c Martins, Rodrigo a

a DEPARTAMENTO DE CIÊNCIA DOS MATERIAIS (Portugal)

b INNOVNANO (Portugal)

c Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM GATE; ELECTRICAL RESISTIVITY; FIELD-EFFECT MOBILITIES; LOW TEMPERATURE ANNEALING; MODULATION RATIO; P-TYPE; P-TYPE CONDUCTION; POLYCRYSTALLINE STRUCTURE; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; TRANSPARENT OXIDE SEMICONDUCTOR;

ELECTRIC CONDUCTIVITY; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HOLE CONCENTRATION; MAGNETRON SPUTTERING; TIN;

THIN FILM TRANSISTORS;

EID: 77955724774 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3469939 Document Type: Article

Times cited : (276)

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