High performance solution-processed amorphous zinc tin oxide thin film transistor

Journal of Physics D: Applied Physics

Volumn 42, Issue 3, 2009, Pages

  Seo, Seok Jun ^a   Choi, Chaun Gi ^b   Hwang, Young Hwan ^a   Bae, Byeong Soo ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; THIN FILMS; THRESHOLD VOLTAGE; TIN; TITANIUM COMPOUNDS; ZINC;

CHANNEL LAYERS; ENHANCEMENT MODES; GATE BIAS; LOW-COST SOLUTIONS; OFF CURRENTS; POSITIVE GATE BIAS; POSITIVE SHIFTS; SOLUTION-PROCESSED; SUB THRESHOLD SLOPES; VISIBLE REGIONS; ZINC-TIN-OXIDES;

THIN FILM TRANSISTORS;

EID: 63649106046     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/3/035106     Document Type: Article

References (31)

1. Prins M W J, Grosse-Holz K-O, Müller G, Cillessen J F M, Giesbers J B, Weening R P and Wolf R M 1996 Appl. Phys. Lett. 68 3650
2. Ennaoui A, Weber M, Scheer R and Lewerenz H J 1998 Sol. Energy Mater. Sol. Cells. 54 277
3. Lewis B G and Paine D C 2000 MRS Bull. 25 22
4. Nomura K, Ohta H, Ueda K, Kamiya T, Hirano M and Hosono H 2003 Science 300 1269
5. Hoffman R L, Norris B J and Wager J F 2003 Appl. Phys. Lett. 82 733
6. Carcia P F, McLean R S, Reilly M H and Nunes G 2003 Appl. Phys. Lett. 82 1117
7. Presley R E, Munsee C L, Park C-H, Hong D, Wager J F and Keszler D A 2004 J. Phys. D: Appl. Phys. 37 2810
8. Fortunato E M C, Barquinha P M C, Pimentel A C M B G, Gonçalves A M F, Marques A J S, Pereira L M N and Martins R F P 2005 Adv. Mater. 17 590
9. Hosono H, Kikuchi N, Ueda N and Kawazoe H 1996 J. Non-Cryst. Solids 198-200 165
10. Hosono H, Yasukawa M and Kawazoe H 1996 J. Non-Cryst. Solids 203 334
11. Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488
12. Yabuta H, Sano M, Abe K, Aiba T, Den T, Kumomi H, Nomura K, Kamiya T and Hosono H 2006 Appl. Phys. Lett. 89 112123
13. Nomura K, Takagi A, Kamiya T, Ohta H, Hirano M and Hosono H 2006 Japan. J. Appl. Phys. 45 4303
14. Iwasaki T, Itagaki N, Den T, Kumomi H, Nomura K, Kamiya T and Hosono H 2007 Appl. Phys. Lett. 90 242114
15. Chiang H Q, Wager J F, Hoffman R L, Jeong J and Keszler D A 2005 Appl. Phys. Lett. 86 013503
16. Jackson W B, Hoffman R L and Herman G S 2005 Appl. Phys. Lett. 87 193503
17. Görrn P, Sander M, Meyer J, Kröger M, Becker E, Johannes H-H, Kowalsky W and Riedl T 2006 Adv. Mater. 18 738
18. Hoffman R L 2006 Solid-State Electron. 50 784
19. Hong D, Chiang H Q and Wager J F 2006 J. Vac. Sci. Technol. B 24 L23
20. Görrn P, Hölzer P, Riedl T, Kowalsky W, Wang J, Weimann T, Hinze P and Kipp S 2007 Appl. Phys. Lett. 90 063502
21. Yaglioglu B, Yeon H Y, Beresford R and Paine D C 2006 Appl. Phys. Lett. 89 062103
22. Arquinha P, Pimentel A, Marques A, Pereira L, Martins R and Fortunato E 2006 J. Non-Cryst. Solids 352 1749
23. Chang Y-J, Lee D-H, Herman G S and Chang C-H 2007 Electrochem. Solid State Lett. 10 H135
24. Lee D-H, Chang Y-J, Herman G S and Chang C-H 2007 Adv. Mater. 19 843
25. Choi C-G, Seo S-J and Bae B-S 2008 Electrochem. Solid State Lett. 11 H7
26. Cross R B M and De Souza M M 2006 Appl. Phys. Lett. 89 263513
27. Suresh A and Muth J F 2008 Appl. Phys. Lett. 92 033502
28. Kumar A, Nathan A and Jabbour G E 2005 IEEE Trans. Electron Devices 52 2386
29. Schroder D K 1998 Semiconductor Material and Device Characterization (New York: Wiley)
30. Nicollian E H and Brews J R 1982 MOS (Metal oxide semiconductor) Physics and Technology (New York: Wiley)
31. Yuan J-F, Zhang J-D, Wang J, Yan D H and Xu W 2004 Thin Solid Films 450 316