Low voltage ferroelectric FET with sub-l00nm copolymer P(VDF-TrFE) gate dielectric for non-volatile IT memory

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 162-165

  Salvatore, Giovanni A ^a   Bouvet, Didier ^a   Stolitchnov, Igor ^a   Setter, Nava ^a   Ionescu, Adrian M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COPOLYMERIZATION; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); MESFET DEVICES; POLYMERS;

BULK SILICONS; FERROELECTRIC CO POLYMERS; FERROELECTRIC GATES; LOW VOLTAGES; MEMORY OPERATIONS; MOS FETS; NONVOLATILE MEMORIES; OPERATING VOLTAGES; POLYMER BASED; PROGRAMMING TIMES; RETENTION TIMES; VOLATILE MEMORIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 58049112400     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681724     Document Type: Conference Paper

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