High charge density and mobility in poly(3-hexylthiophene) using a polarizable gate dielectric

Organic Electronics

Volumn 7, Issue 3, 2006, Pages 132-136

  Naber, R C G ^a   Mulder, M ^a   de Boer, B ^a   Blom, P W M ^a   de Leeuw, D M ^b  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Ferroelectric polymer; Field effect transistor; Poly(3 hexylthiophene)

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; DIELECTRIC DEVICES; GATES (TRANSISTOR); INTERFACES (MATERIALS); POLARIZATION;

CHARGE DENSITY; FERROELECTRIC POLARIZATION; ORGANIC FIELD-EFFECT TRANSISTORS (OFET);

SULFUR COMPOUNDS;

EID: 33646120554     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2005.11.007     Document Type: Article

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