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Volumn 157, Issue 7, 2010, Pages

Nonvolatile memory thin film transistors using spin-coated amorphous zinc indium oxide channel and ferroelectric copolymer

(6) Yoon, Sung Min a,b Jung, Soon Won b Yang, Shin Hyuk b Byun, Chun Won b Hwang, Chi Sun b Ishiwara, Hiroshi a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; ANNEALING TEMPERATURES; CONDUCTION MECHANISM; CRYSTALLINE PHASIS; DEVICE PERFORMANCE; FERROELECTRIC COPOLYMERS; FERROELECTRIC FIELDS; FERROELECTRIC GATE INSULATORS; FIELD-EFFECT MOBILITIES; FILM COMPOSITION; MEMORY WINDOW; NON-VOLATILE MEMORIES; OFF CURRENT; ON/OFF RATIO; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE); SOLUTION-PROCESSED; SUBTHRESHOLD SWING; TRANSFER CHARACTERISTICS; VISIBLE RANGE; ZINC INDIUM OXIDE;

AMORPHOUS FILMS; ANNEALING; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; SPIN DYNAMICS; THIN FILM TRANSISTORS; THIN FILMS; ZINC;

INDIUM;

EID: 77953157563 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3428670 Document Type: Article

Times cited : (3)

References (39)

1
- 67650483313
- 10.1063/1.3159832
- J. S. Park, T. W. Kim, D. Stryakhilev, J. S. Lee, S. G. An, Y. S. Pyo, D. B. Lee, Y. G. Mo, D. U. Jin, and H. K. Chung, Appl. Phys. Lett. , 95, 013503 (2009). 10.1063/1.3159832
- (2009) Appl. Phys. Lett. , vol.95 , pp. 013503
- Park, J.S.¹ Kim, T.W.² Stryakhilev, D.³ Lee, J.S.⁴ An, S.G.⁵ Pyo, Y.S.⁶ Lee, D.B.⁷ Mo, Y.G.⁸ Jin, D.U.⁹ Chung, H.K.¹⁰

2
- 33645382882
- 10.1002/adma.200501957
- P. Görrn, M. Sander, J. Meyer, M. Kröger, E. Becker, H. H. Johannes, W. Kowalsky, and T. Riedl, Adv. Mater. , 18, 738 (2006). 10.1002/adma.200501957
- (2006) Adv. Mater. , vol.18 , pp. 738
- Görrn, P.¹ Sander, M.² Meyer, J.³ Kröger, M.⁴ Becker, E.⁵ Johannes, H.H.⁶ Kowalsky, W.⁷ Riedl, T.⁸

3
- 27744558799
- Integration of organic FETs with organic photodiodes for a large area, flexible, and lightweight sheet image scanners
- DOI 10.1109/TED.2005.857935
- T. Someya, Y. Kato, S. Iba, Y. Noguchi, T. Sekitani, H. Kawaguchi, and T. Sakurai, IEEE Trans. Electron Devices IETDAI 0018-9383, 52, 2502 (2005). 10.1109/TED.2005.857935 (Pubitemid 41594881)
- (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.11 , pp. 2502-2511
- Someya, T.¹ Kato, Y.² Iba, S.³ Noguchi, Y.⁴ Sekitani, T.⁵ Kawaguchi, H.⁶ Sakurai, T.⁷

4
- 67349215696
- IETDAI 0018-9383,. 10.1109/TED.2009.2015169
- T. Sekitani, K. Zaitsu, Y. Noguchi, K. Ishibe, M. Takamiya, T. Sakurai, and T. Someya, IEEE Trans. Electron Devices IETDAI 0018-9383, 56, 1027 (2009). 10.1109/TED.2009.2015169
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 1027
- Sekitani, T.¹ Zaitsu, K.² Noguchi, Y.³ Ishibe, K.⁴ Takamiya, M.⁵ Sakurai, T.⁶ Someya, T.⁷

5
- 58149528226
- EDLEDZ 0741-3106.
- K. L. Lin and K. Jain, IEEE Electron Device Lett. EDLEDZ 0741-3106, 30, 14 (2009).
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 14
- Lin, K.L.¹ Jain, K.²

6
- 72149099927
- 10.1126/science.1179963
- T. Sekitani, T. Yukota, U. Zschieschang, H. Klauk, S. Bauer, K. Takeuchi, M. Takamiya, T. Sakurai, and T. Someya, Science , 326, 1516 (2009). 10.1126/science.1179963
- (2009) Science , vol.326 , pp. 1516
- Sekitani, T.¹ Yukota, T.² Zschieschang, U.³ Klauk, H.⁴ Bauer, S.⁵ Takeuchi, K.⁶ Takamiya, M.⁷ Sakurai, T.⁸ Someya, T.⁹

7
- 77953145518
- www.sharpsma.com/Page.aspx/americas/en/a16ca626-5fc4-4647-b7cb- 6a8531bbf39c/ last accessed 06/2/
- www.sharpsma.com/Page.aspx/americas/en/a16ca626-5fc4-4647-b7cb- 6a8531bbf39c/, last accessed 06/2/ 2009.
- (2009)

8
- 52349119377
- 10.1063/1.2975159
- K. Müller, D. Mandal, K. Henkel, I. Palouma, and D. Schmeisser, Appl. Phys. Lett. , 93, 112901 (2008). 10.1063/1.2975159
- (2008) Appl. Phys. Lett. , vol.93 , pp. 112901
- Müller, K.¹ Mandal, D.² Henkel, K.³ Palouma, I.⁴ Schmeisser, D.⁵

9
- 39149123138
- APAMFC 0947-8396,. 10.1007/s00339-007-4372-3
- T. Nakajima, Y. Takahashi, and T. Furukawa, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396, 91, 33 (2008). 10.1007/s00339-007-4372-3
- (2008) Appl. Phys. A: Mater. Sci. Process. , vol.91 , pp. 33
- Nakajima, T.¹ Takahashi, Y.² Furukawa, T.³

10
- 14744284800
- High-performance solution-processed polymer ferroelectric field-effect transistors
- DOI 10.1038/nmat1329
- R. C. G. Naber, C. Tanase, P. W. M. Blom, G. H. Gelinck, A. W. Marsman, F. J. Touwslager, S. Setayesh, and D. M. de Leeuw, Nat. Mater., 4, 243 (2005). 10.1038/nmat1329 1476-1122 (Pubitemid 40330276)
- (2005) Nature Materials , vol.4 , Issue.3 , pp. 243-248
- Naber, R.C.G.¹ Tanase, C.² Blom, P.W.M.³ Gelinck, G.H.⁴ Marsman, A.W.⁵ Touwslager, F.J.⁶ Setayesh, S.⁷ De Leeuw, D.M.⁸

11
- 66449090458
- 10.1002/adfm.200801097
- S. J. Kang, I. Bae, Y. J. Park, T. H. Park, J. Sung, S. C. Yoon, K. H. Kim, D. H. Choi, and C. Park, Adv. Funct. Mater. , 19, 1609 (2009). 10.1002/adfm.200801097
- (2009) Adv. Funct. Mater. , vol.19 , pp. 1609
- Kang, S.J.¹ Bae, I.² Park, Y.J.³ Park, T.H.⁴ Sung, J.⁵ Yoon, S.C.⁶ Kim, K.H.⁷ Choi, D.H.⁸ Park, C.⁹

12
- 9744248669
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- DOI 10.1038/nature03090
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) , 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
- (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

13
- 7544247006
- 10.1063/1.1790587
- E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Goncalves, A. J. S. Marques, R. F. P. Martins, and L. M. N. Pereira, Appl. Phys. Lett. , 85, 2541 (2004). 10.1063/1.1790587
- (2004) Appl. Phys. Lett. , vol.85 , pp. 2541
- Fortunato, E.M.C.¹ Barquinha, P.M.C.² Pimentel, A.C.M.B.G.³ Goncalves, A.M.F.⁴ Marques, A.J.S.⁵ Martins, R.F.P.⁶ Pereira, L.M.N.⁷

14
- 60349091512
- 10.1002/adma.200801470
- S. H. K. Park, C. S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J. I. Lee, K. Lee, M. S. Oh, and S. Im, Adv. Mater. , 21, 678 (2009). 10.1002/adma. 200801470
- (2009) Adv. Mater. , vol.21 , pp. 678
- Park, S.H.K.¹ Hwang, C.S.² Ryu, M.³ Yang, S.⁴ Byun, C.⁵ Shin, J.⁶ Lee, J.I.⁷ Lee, K.⁸ Oh, M.S.⁹ Im, S.¹⁰

15
- 47249122932
- JPAPBE 0022-3727,. 10.1088/0022-3727/41/12/125102
- C. S. Li, Y. N. Li, Y. L. Wu, B. S. Ong, and R. O. Loutfy, J. Phys. D JPAPBE 0022-3727, 41, 125102 (2008). 10.1088/0022-3727/41/12/125102
- (2008) J. Phys. D , vol.41 , pp. 125102
- Li, C.S.¹ Li, Y.N.² Wu, Y.L.³ Ong, B.S.⁴ Loutfy, R.O.⁵

16
- 70350582950
- NNOTER 0957-4484,. 10.1088/0957-4484/20/46/465201
- C. Yang, K. Hong, J. Jang, D. S. Chung, T. K. An, W. S. Choi, and C. E. Park, Nanotechnology NNOTER 0957-4484, 20, 465201 (2009). 10.1088/0957-4484/20/ 46/465201
- (2009) Nanotechnology , vol.20 , pp. 465201
- Yang, C.¹ Hong, K.² Jang, J.³ Chung, D.S.⁴ An, T.K.⁵ Choi, W.S.⁶ Park, C.E.⁷

17
- 33947313009
- High-performance, spin-coated zinc tin oxide thin-film transistors
- DOI 10.1149/1.2666588
- Y. J. Chang, D. H. Lee, G. S. Herman, and C. H. Chang, Electrochem. Solid-State Lett. , 10, H135 (2007). 10.1149/1.2666588 (Pubitemid 46439894)
- (2007) Electrochemical and Solid-State Letters , vol.10 , Issue.5 , pp. 135-138
- Chang, Y.-J.¹ Lee, D.-H.² Herman, G.S.³ Chang, C.-H.⁴

18
- 69149104577
- 10.1149/1.3119037
- S. K. Park, Y. H. Kim, H. S. Kim, and J. I. Han, Electrochem. Solid-State Lett. , 12, H256 (2009). 10.1149/1.3119037
- (2009) Electrochem. Solid-State Lett. , vol.12
- Park, S.K.¹ Kim, Y.H.² Kim, H.S.³ Han, J.I.⁴

19
- 56749166069
- 10.1149/1.2976027
- G. H. Kim, H. S. Shin, B. D. Ahn, K. H. Kim, W. J. Park, and H. J. Kim, J. Electrochem. Soc. , 156, H7 (2009). 10.1149/1.2976027
- (2009) J. Electrochem. Soc. , vol.156
- Kim, G.H.¹ Shin, H.S.² Ahn, B.D.³ Kim, K.H.⁴ Park, W.J.⁵ Kim, H.J.⁶

20
- 67650486403
- 10.1063/1.3157265
- J. H. Lim, J. H. Shim, J. H. Choi, J. Joo, K. Park, H. Jeon, M. R. Moon, D. Jung, H. Kim, and H. J. Lee, Appl. Phys. Lett. , 95, 012108 (2009). 10.1063/1.3157265
- (2009) Appl. Phys. Lett. , vol.95 , pp. 012108
- Lim, J.H.¹ Shim, J.H.² Choi, J.H.³ Joo, J.⁴ Park, K.⁵ Jeon, H.⁶ Moon, M.R.⁷ Jung, D.⁸ Kim, H.⁹ Lee, H.J.¹⁰

21
- 34250621864
- A general route to printable high-mobility transparent amorphous oxide semiconductors
- DOI 10.1002/adma.200600961
- D. H. Lee, Y. J. Chang, G. S. Herman, and C. H. Chang, Adv. Mater. , 19, 843 (2007). 10.1002/adma.200600961 (Pubitemid 46932815)
- (2007) Advanced Materials , vol.19 , Issue.6 , pp. 843-847
- Lee, D.-H.¹ Chang, Y.-J.² Herman, G.S.³ Chang, C.-H.⁴

22
- 36148976499
- Solution-processed indium-zinc oxide transparent thin-film transistors
- DOI 10.1149/1.2800562
- C. G. Choi, S. J. Seo, and B. S. Bae, Electrochem. Solid-State Lett. , 11, H7 (2008). 10.1149/1.2800562 (Pubitemid 350115965)
- (2008) Electrochemical and Solid-State Letters , vol.11 , Issue.1
- Choi, C.G.¹ Seo, S.-J.² Bae, B.-S.³

23
- 67651227428
- 10.1149/1.3156830
- Y. H. Hwang, J. H. Jeon, S. J. Seo, and B. S. Bae, Electrochem. Solid-State Lett. , 12, H336 (2009). 10.1149/1.3156830
- (2009) Electrochem. Solid-State Lett. , vol.12
- Hwang, Y.H.¹ Jeon, J.H.² Seo, S.J.³ Bae, B.S.⁴

24
- 84861795675
- DTPSDS 0003-966X.
- M. K. Ryu, K. B. Park, J. B. Seon, J. Park, I. S. Kee, Y. G. Lee, and S. Y. Lee, SID Int. Symp. Digest Tech. Papers DTPSDS 0003-966X, 2009, 188.
- SID Int. Symp. Digest Tech. Papers , vol.2009 , pp. 188
- Ryu, M.K.¹ Park, K.B.² Seon, J.B.³ Park, J.⁴ Kee, I.S.⁵ Lee, Y.G.⁶ Lee, S.Y.⁷

25
- 0029356624
- JAPLD8 0021-4922,. 10.1143/JJAP.34.L971
- T. Minami, H. Sonohara, T. Kakumu, and S. Takata, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922, 34, L971 (1995). 10.1143/JJAP.34.L971
- (1995) Jpn. J. Appl. Phys., Part 2 , vol.34
- Minami, T.¹ Sonohara, H.² Kakumu, T.³ Takata, S.⁴

26
- 1642343570
- 10.1016/j.tsf.2003.08.047
- T. Sasabayashi, N. Ito, E. Nishimura, M. Kon, P. K. Song, K. Utsumi, A. Kaijo, and Y. Shigesato, Thin Solid Films , 445, 219 (2003). 10.1016/j.tsf.2003.08.047
- (2003) Thin Solid Films , vol.445 , pp. 219
- Sasabayashi, T.¹ Ito, N.² Nishimura, E.³ Kon, M.⁴ Song, P.K.⁵ Utsumi, K.⁶ Kaijo, A.⁷ Shigesato, Y.⁸

27
- 55549110945
- 10.1002/adfm.200700604
- M. P. Taylor, D. W. Readey, M. F. A. M. Hest, C. W. Teplin, J. A. Alleman, M. S. Dabney, L. M. Gedvilas, B. M. Keyes, B. To, J. D. Perkins, Adv. Funct. Mater. , 18, 3169 (2008). 10.1002/adfm.200700604
- (2008) Adv. Funct. Mater. , vol.18 , pp. 3169
- Taylor, M.P.¹ Readey, D.W.² Hest, M.F.A.M.³ Teplin, C.W.⁴ Alleman, J.A.⁵ Dabney, M.S.⁶ Gedvilas, L.M.⁷ Keyes, B.M.⁸ To, B.⁹ Perkins, J.D.¹⁰

28
- 20644459026
- Transparent thin-film transistors with zinc indium oxide channel layer
- DOI 10.1063/1.1862767, 064505
- N. L. Dehuff, E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C. H. Park, and D. A. Keszler, J. Appl. Phys. , 97, 064505 (2005). 10.1063/1.1862767 (Pubitemid 40833716)
- (2005) Journal of Applied Physics , vol.97 , Issue.6 , pp. 1-5
- Dehuff, N.L.¹ Kettenring, E.S.² Hong, D.³ Chiang, H.Q.⁴ Wager, J.F.⁵ Hoffman, R.L.⁶ Park, C.-H.⁷ Keszler, D.A.⁸

29
- 33846188498
- Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature
- DOI 10.1063/1.2430917
- J. I. Song, J. S. Park, H. Kim, Y. W. Heo, G. M. Kim, and B. D. Choi, Appl. Phys. Lett. , 90, 022106 (2007). 10.1063/1.2430917 (Pubitemid 46105576)
- (2007) Applied Physics Letters , vol.90 , Issue.2 , pp. 022106
- Song, J.-I.¹ Park, J.-S.² Kim, H.³ Heo, Y.-W.⁴ Lee, J.-H.⁵ Kim, J.-J.⁶ Kim, G.M.⁷ Choi, B.D.⁸

30
- 44249123058
- Amorphous IZO-based transparent thin film transistors
- DOI 10.1016/j.tsf.2007.10.081, PII S0040609007017051
- D. C. Paine, B. Yaglioglu, Z. Beiley, and S. Lee, Thin Solid Films , 516, 5894 (2008). 10.1016/j.tsf.2007.10.081 (Pubitemid 351726013)
- (2008) Thin Solid Films , vol.516 , Issue.17 , pp. 5894-5898
- Paine, D.C.¹ Yaglioglu, B.² Beiley, Z.³ Lee, S.⁴

31
- 64549136743
- 10.1116/1.3097852
- J. H. Choi, U. B. Han, K. C. Lee, J. H. Lee, J. J. Kim, I. T. Cho, J. H. Lee, and Y. W. Heo, J. Vac. Sci. Technol. B , 27, 622 (2009). 10.1116/1.3097852
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 622
- Choi, J.H.¹ Han, U.B.² Lee, K.C.³ Lee, J.H.⁴ Kim, J.J.⁵ Cho, I.T.⁶ Lee, J.H.⁷ Heo, Y.W.⁸

32
- 56249144477
- 10.1063/1.3020714
- K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Appl. Phys. Lett. , 93, 192107 (2008). 10.1063/1.3020714
- (2008) Appl. Phys. Lett. , vol.93 , pp. 192107
- Nomura, K.¹ Kamiya, T.² Ohta, H.³ Hirano, M.⁴ Hosono, H.⁵

33
- 30344478844
- Intrinsic switching characteristics of ferroelectric ultrathin vinylidene fluoride/trifluoroethylene copolymer films revealed using Au electrode
- DOI 10.1143/JJAP.44.L1385
- T. Nakajima, R. Abe, Y. Takahashi, and T. Furukawa, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922, 44, L1385 (2005). 10.1143/JJAP.44.L1385 (Pubitemid 43065100)
- (2005) Japanese Journal of Applied Physics, Part 2: Letters , vol.44 , Issue.42-45
- Nakajima, T.¹ Abe, R.² Takahashi, Y.³ Furukawa, T.⁴

34
- 43149113209
- Restricted domain growth and polarization reversal kinetics in ferroelectric polymer thin films
- DOI 10.1063/1.2907990
- R. Gysel, I. Stolichnov, A. K. Tagantsev, N. Setter, and P. Mokry, J. Appl. Phys. , 103, 084120 (2008). 10.1063/1.2907990 (Pubitemid 351637527)
- (2008) Journal of Applied Physics , vol.103 , Issue.8 , pp. 084120
- Gysel, R.¹ Stolichnov, I.² Tagantsev, A.K.³ Setter, N.⁴ Mokry, P.⁵

35
- 63749083605
- 10.1063/1.3055411
- T. Furukawa, S. Kanai, A. Okada, Y. Takahashi, and R. Yamamoto, J. Appl. Phys. , 105, 061636 (2009). 10.1063/1.3055411
- (2009) J. Appl. Phys. , vol.105 , pp. 061636
- Furukawa, T.¹ Kanai, S.² Okada, A.³ Takahashi, Y.⁴ Yamamoto, R.⁵

36
- 67650711677
- 10.1063/1.3176213
- R. V. Gaynutdinov, O. A. Lysova, S. G. Yudin, A. L. Tolstikhina, A. L. Kholkin, V. M. Fridkin, and S. Ducharme, Appl. Phys. Lett. , 95, 023303 (2009). 10.1063/1.3176213
- (2009) Appl. Phys. Lett. , vol.95 , pp. 023303
- Gaynutdinov, R.V.¹ Lysova, O.A.² Yudin, S.G.³ Tolstikhina, A.L.⁴ Kholkin, A.L.⁵ Fridkin, V.M.⁶ Ducharme, S.⁷

37
- 0035300645
- JAPNDE 0021-4922,. 10.1143/JJAP.40.2917
- E. Tokumitsu, K. Okamoto, and H. Ishiwara, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922, 40, 2917 (2001). 10.1143/JJAP.40.2917
- (2001) Jpn. J. Appl. Phys., Part 1 , vol.40 , pp. 2917
- Tokumitsu, E.¹ Okamoto, K.² Ishiwara, H.³

38
- 72449127604
- JPAPBE 0022-3727,. 10.1088/0022-3727/42/24/245101
- S. M. Yoon, S. Yang, S. H. Ko Park, S. W. Jung, C. W. Byun, D. H. Cho, S. Y. Kang, and C. S. Hwang, J. Phys. D JPAPBE 0022-3727, 42, 245101 (2009). 10.1088/0022-3727/42/24/245101
- (2009) J. Phys. D , vol.42 , pp. 245101
- Yoon, S.M.¹ Yang, S.² Ko Park, S.H.³ Jung, S.W.⁴ Byun, C.W.⁵ Cho, D.H.⁶ Kang, S.Y.⁷ Hwang, C.S.⁸

39
- 70350070411
- 10.1063/1.3247881
- C. H. Park, G. Lee, K. H. Lee, S. Im, B. H. Lee, and M. M. Sung, Appl. Phys. Lett. , 95, 153502 (2009). 10.1063/1.3247881
- (2009) Appl. Phys. Lett. , vol.95 , pp. 153502
- Park, C.H.¹ Lee, G.² Lee, K.H.³ Im, S.⁴ Lee, B.H.⁵ Sung, M.M.⁶

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