Low-voltage operation and excellent data retention characteristics of metal-ferroelectric-insulator-Si devices based on organic ferroelectric films

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Lu, Xubing ^a   Yoon, Joo Won ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA RETENTIONS; ELECTRICAL CHARACTERISTICS; LOW-VOLTAGE OPERATIONS; POLY(VINYLIDENE FLUORIDE); POLYMETHYLMETHACRYLATE; SI DEVICES; TRIFLUOROETHYLENE; VOLTAGE SWEEPS; WIDE MEMORIES;

DATA STORAGE EQUIPMENT; DIODES; ESTERS; FERROELECTRIC DEVICES; FERROELECTRICITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

FERROELECTRIC FILMS;

EID: 65449189476     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3097691     Document Type: Article

References (22)

1. J. F. Scott and C. A. Paz de Araujo, Science 0036-8075 10.1126/science.246.4936.1400 246, 1400 (1989).
2. C. A. Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature (London) 0028-0836 10.1038/374627a0 374, 627 (1995).
3. H. Ishiwara, Mater. Res. Soc. Symp. Proc. 748, 297 (2003).
4. M. Takahashi and S. Sakai, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.44.L800 44, L800 (2005).
5. M. Takahashi, T. Horiuchi, S. Wang, Q. H. Li, and S. Sakai, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2952464 26, 1585 (2008).
6. K. Takahashi, K. Aizawa, B. E. Park, and H. Ishiwara, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.44.6218 44, 6218 (2005).
7. X. B. Lu, K. Maruyama, and H. Ishiwara, J. Appl. Phys. 0021-8979 10.1063/1.2871772 103, 044105 (2008).
8. L. Van Hai, T. Kanashima, and M. Okuyama, Integr. Ferroelectr. 96, 27 (2008).
9. P. C. Juan, Y. P. Hu, F. C. Chiu, and J. Y. Lee, J. Appl. Phys. 0021-8979 10.1063/1.2014935 98, 044103 (2005).
10. B. E. Park, S. Shouriki, E. Tokumitsu, and H. Ishiwara, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.37.5145 37, 5145 (1998).
11. Y. W. Chiang and J. M. Wu, Appl. Phys. Lett. 0003-6951 10.1063/1.2794335 91, 142103 (2007).
12. A. J. Lovinger, Science 0036-8075 10.1126/science.220.4602.1115 220, 1115 (1983).
13. Q. M. Zhang, V. Bharti, and X. Zhao, Science 0036-8075 10.1126/science.280.5372.2101 280, 2101 (1998).
14. S. Fujisaki, H. Ishiwara, and Y. Fujisaki, Appl. Phys. Lett. 0003-6951 10.1063/1.2723678 90, 162902 (2007).
15. S. H. Lim, A. C. Rastogi, and S. B. Desu, J. Appl. Phys. 0021-8979 10.1063/1.1785836 96, 5673 (2004).
16. S. Wi, N. Senthilkumar, and S. Rhee, J. Mater. Sci.: Mater. Electron. 0957-4522 10.1007/s10854-007-9266-9 19, 45 (2008).
17. D. W. Kim, J. H. Kim, J. N. Kim, H. J. Park, H. S. Jeon, and B. E. Park, Integr. Ferroelectr. 98, 121 (2008).
18. A. Gerber, H. Kohlstedt, M. Fitsilis, R. Waser, T. J. Reece, S. Ducharme, and E. Rije, J. Appl. Phys. 0021-8979 10.1063/1.2218463 100, 024110 (2006).
19. S. Fujisaki, H. Ishiwara, and Y. Fujisaki, Appl. Phys. Express 1882-0778 10.1143/APEX.1.081801 1, 081801 (2008).
20. H. Horibe and M. Taniyama, J. Electrochem. Soc. 0013-4651 10.1149/1.2137651 153, G119 (2006).
21. X. B. Lu, K. Maruyama, and H. Ishiwara, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/23/4/045002 23, 045002 (2008).
22. X. B. Lu, H. Ishiwara, and K. Maruyama, J. Mater. Res. 23, 2727 (2008). 0884-2914