Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

ACS Nano

Volumn 3, Issue 3, 2009, Pages 700-706

  Liao, L ^a,b,c   Fan, H J ^a,b,c   Yan, B ^a,b,c   Zhang, Z ^a,b,c   Chen, L L ^a,b,c   Li, B S ^a,b,c   Xing, G Z ^a,b,c   Shen, Z X ^a,b,c   Wu, T ^a,b,c   Sun, X W ^a,b,c   Wang, J ^a,b,c   Yu, T ^a,b,c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Depletion; Ferroelectric; Field effect transistor; Nanowires; Nonvolatile memory; PZT; ZnO

Indexed keywords

DEPLETION; FERROELECTRIC; NONVOLATILE MEMORY; PZT; ZNO;

DATA STORAGE EQUIPMENT; ELECTRIC WIRE; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); LEAD; NANOWIRES; OXIDE FILMS; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICON COMPOUNDS; ZINC OXIDE; ZIRCONIUM;

FERROELECTRIC FILMS;

EID: 65249119657     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn800808s     Document Type: Article

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