Flexible copper-7,7,8,8 tetracyanochinodimethane memory devices - Operation, cross talk and bending

Thin Solid Films

Volumn 518, Issue 8, 2010, Pages 2222-2227

  Novak, Michael ^a   Burkhardt, Martin ^a   Jedaa, Abdesselam ^a   Halik, Marcus ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Cross talk; Device bending; Non volatile memory

Indexed keywords

ACTIVE LAYER; AMBIENT CONDITIONS; CHARGE TRANSFER COMPLEX; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; ELEVATED TEMPERATURE; FLEXIBLE SUBSTRATE; MECHANICAL STRESS; MEMORY CELL; MEMORY DEVICE; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; PASSIVE MATRIX; ROOM TEMPERATURE; STRESS-INDUCED; SWITCHING VOLTAGES;

CHARGE TRANSFER; COPPER COMPOUNDS; CRACK DETECTION; ION EXCHANGE; POLYETHYLENE TEREPHTHALATES; STRESSES; THERMOPLASTICS;

CROSSTALK;

EID: 73949155128     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.07.144     Document Type: Article

References (25)

1. Bez R., and Pirovano A. Mater. Sci. Semicond. Process. 7 (2004) 349
2. Yang Y., Ouyang J., Ma L., Tseng R.J.-H., and Chu C.-W. Adv. Funct. Mater. 16 (2006) 1001
3. Müller G., Happ T., Kund M., Lee G.Y., Nagel N., and Sezi R. Technical Digest - International Electron Devices Meeting (2004), IEDM 567
4. Scott J.C., and Bozano L.D. Adv. Mater. 19 (2007) 1452
5. Ma L.P., Liu J., and Yang Y. Appl. Phys. Lett. 80 (2002) 2997
6. Ma L., Pyo S., Ouyang J., Xu Q., and Yang Y. Appl. Phys. Lett. 82 (2003) 1419
7. Bozano L.D., Kean B.W., Deline V.R., Salem J.R., and Scott J.C. Appl. Phys. Lett. 84 (2004) 607
8. Gelinck G. Nature 445 (2007) 268
9. Leong W.L., Lee P.S., Lohani A., Lam Y.M., Chen T., Zhang S., Dodabalapur A., and Mhaisalkar S.G. Adv. Mater. 20 (2008) 2325
10. Furukawa T. Phase Transit. 18 (1989) 143
11. Reece T.J., Ducharme S., Sorokin A.V., and Poulsen M. Appl. Phys. Lett. 82 (2003) 142
12. Unni K.N.N., de Bettignies R., Dabos-Seignon S., and Nunzi J.-M. Appl. Phys. Lett. 85 (2004) 1823
13. Chu B., Zhou X., Ren K., Neese B., Lin M., Wang Q., Bauer F., and Zhang M. Science 313 (2006) 334
14. Naber R.C.G., Tanase C., Blom P.W.M., Gelinck G.H., Marsman A.W., Touwslager F.J., Setayesh S., and de Leeuw D.M. Nat. Mater. 4 (2005) 243
15. Carchano H., Lacoste R., and Segui Y. Appl. Phys. Lett. 19 (1971) 414
16. Tondelier D., Lmimouni K., Vuillaume D., Fery C., and Haas G. Appl. Phys. Lett. 85 (2004) 5763
17. Ouyang M., Hou S.M., Chen H.F., Wang K.Z., and Xue Z.Q. Phys. Lett. A 235 (1997) 413
18. Alves H., Molinari A.S., Xie H., and Morpurgo A.F. Nat. Mater. 7 (2008) 574
19. Potember R.S., Poehler T.O., and Cowan D.O. Appl. Phys. Lett. 34 (1979) 405
20. Billen J., Steudel S., Müller R., Genoe J., and Heremans P. Appl. Phys. Lett. 91 (2007) 263507
21. Müller R., Naulaerts R., Billen J., Genoe J., and Heremans P. Appl. Phys. Lett. 90 (2007) 063503
22. Kamitsos E.I., Tzinis C.H., and Risen Jr. W.M. Solid State Commun. 42 (1982) 561
23. Xiao K., Tao J., Pan Z., Puretzky A.A., Ivanov I.N., Pennycook S.J., and Geohegan D.B. Angew. Chem., Int. Ed. 46 (2007) 2650
24. Sato C., Wakamatsu S., Tadokoro K., and Ishii K. J. Appl. Phys. 68 (1990) 6535
25. Kim D.-H., Ahn J.-H., Choi W.M., Kim H.-S., Kim T.-H., Song J., Huang Y.Y., Liu Z., Lu C., and Rogers J.A. Science 320 (2008) 507