Self-aligned-gate metal/ferroelectric/insulator/semiconductor field-effect transistors with long memory retention

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 24-27, 2005, Pages

  Takahashi, Mitsue ^a   Sakai, Shigeki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

1T FeRAM; Ferroelectric; HfAlO; Metal ferroelectric insulator semiconductor (MFIS); Nonvolatile memory; Retention; SBT

Indexed keywords

FERROELECTRIC DEVICES; GATES (TRANSISTOR); RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICES; VOLTAGE CONTROL;

1T FERAM; HFALO; METAL/FERROELECTRIC/INSULATOR/SEMICONDUCTOR (MFIS); NONVOLATILE MEMORY; RETENTION;

FIELD EFFECT TRANSISTORS;

EID: 32044451564     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L800     Document Type: Article

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