Nondestructive readout operation of oxide-thin-film-transistor-based 2T-type nonvolatile memory cell

IEEE Electron Device Letters

Volumn 31, Issue 2, 2010, Pages 138-140

  Yoon, Sung Min ^a   Byun, Chun Won ^a   Yang, Shinhyuk ^a   Park, Sang Hee Ko ^a   Cho, Doo Hee ^a   Jung, Soon Won ^a   Kang, Seung Youl ^a   Hwang, Chi Sun ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Nonvolatile memory (NVM); Oxide semiconductor; Polymeric ferroelectric; Thin film transistor (TFT)

Indexed keywords

CELL STRUCTURE; FABRICATION PROCEDURE; GATE INSULATOR; GLASS SUBSTRATES; MEMORY CELL; NON-VOLATILE MEMORIES; NONDESTRUCTIVE READOUT; NONVOLATILE MEMORY CELLS; OXIDE SEMICONDUCTOR; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE); ZNO;

FERROELECTRICITY; POLYMERIC FILMS; SEMICONDUCTING GLASS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR STORAGE; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 75749114014     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2036137     Document Type: Article

References (20)

1. S. R. Forrest, "The path to ubiquitous and low-cost organic electronic appliances on plastic," Nature, vol.428, no.6986, pp. 911-918, Apr. 2004.
2. P. F. Baude, D. A. Ender, M. A. Haase, T. W. Kelley, D. V. Muyres, and S. D. Theiss, "Pentacene-based radio-frequency identification circuitry," Appl. Phys. Lett., vol.82, no.22, pp. 3964-3966, Jun. 2003.
3. T. Someya, Y. Kato, S. Iba, Y. Noguchi, T. Sekitani, H. Kawaguchi, and T. Sakurai, "Integration of organic FETs with organic photodiodes for a large area, flexible, and lightweight sheet image scanners," IEEE Trans. Electron Devices, vol.52, no.11, pp. 2502-2511, Nov. 2005.
4. K. L. Lin and K. Jain, "Design and fabrication of stretchable multilayer self-aligned interconnects for flexible electronics and large-area sensor arrays using excimer laser photoablation," IEEE Electron Device Lett., vol.30, no.1, pp. 14-16, Jan. 2009.
5. J. S. Park, T. W. Kim, D. Stryakhilev, J. S. Lee, S. G. An, Y. S. Pyo, D. B. Lee, Y. G. Mo, D. U. Jin, and H. K. Chung, "Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors," Appl. Phys. Lett., vol.95, no.1, p. 013503, Jan. 2009.
6. P. Görrn, M. Sander, J. Meyer, M. Kröger, E. Becker, H. H. Johannes, W. Kowalsky, and T. Riedl, "Towards see-through displays: Fully transparent thin-film transistors driving transparent organic light-emitting diodes," Adv. Mater., vol.18, no.6, pp. 738-741, Mar. 2006.
7. T. Sekitani, K. Zaitsu, Y. Noguchi, K. Ishibe, M. Takamiya, T. Sakurai, and T. Someya, "Printed nonvolatile memory for a sheet-type communication system," IEEE Trans. Electron Device, vol.56, no.5, pp. 1027-1035, May 2009.
8. R. C. G. Naber, C. Tanase, P. W. M. Blom, G. H. Gelinck, A. W. Marsman, F. J. Touwslager, S. Setayesh, and D. M. de Leeuw, "High performance solution processed polymer ferroelectric field-effect transistors," Nat. Mater., vol.4, no.3, pp. 243-248, Mar. 2005.
9. S. J. Kang, I. Bae, Y. J. Park, T. H. Park, J. Sung, S. C. Yoon, K. H. Kim, D. H. Choi, and C. Park, "Nonvolatile ferroelectric poly(vinylidene fluoride-trifluoroethylene) memory based on a single-crystalline tri-isopropylsilyethynyl pentacene field-effect transistor," Adv. Funct. Mater., vol.19, no.10, pp. 1609-1616, May 2009.
10. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol.432, no.7016, pp. 488-492, Nov. 2004.
11. S. H. K. Park, C. S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J. I. Lee, K. Lee, M. S. Oh, and S. Im, "Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-light-emitting-diode display panel," Adv. Mater., vol.21, no.6, pp. 678-682, Feb. 2009.
12. S. H. Noh, W. Choi, M. S. Oh, D. K. Hwang, K. Lee, S. Im, S. Jang, and K. Kim, "ZnO-based nonvolatile memory thin-film transistors with polymer dielectric/ferroelectric double gate insulators," Appl. Phys. Lett., vol.90, no.25, p. 253 504, Jun. 2007.
13. K. H. Lee, G. Lee, K. Lee, M. S. Oh, S. Im, and S. M. Yoon, "High-mobility nonvolatile memory thin-film transistors with ferroelectric polymer interfacing ZnO and pentacene channels," Adv. Mater., vol.21, no.42, pp. 4287-4291, Nov. 2009.
14. Y. Kaneko, H. Tanaka, and Y. Kato, "First demonstration of a NOR-type memory cell incorporating a ferroelectric-gate FET memory and a ZnO-TFT selector," Jpn. J. Appl. Phys., vol. 48, no. 9B, p. 09KA19, 2009.
15. J. J. Lee and S. T. Hsu, "Two transistor ferroelectric memory," U.S. Patent 6 510 073, Jan. 21, 2003.
16. Z. Chen, V. Joshi, M. Lim, C. A. Paz de Arauzo, and L. D. McMillan, "Ferroelectric memory and method of operating same," 6 373 743, Apr. 16, 2002.
17. K. H. Lee, G. Lee, K. Lee, M. S. Oh, and S. Im, "Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer," Appl. Phys. Lett., vol.94, no.9, p. 093 304, Mar. 2009.
18. Z. Hu, M. Tian, B. Nysten, and A. M. Jonas, "Regular arrays of highly ordered ferroelectric polymer nanostructures for non-volatile low-voltage memories," Nat. Mater., vol.8, no.1, pp. 62-67, Jan. 2009.
19. 3/ZnO," Ext. Abst. Solid-State Mater. Devices, pp. 280-281, 2009.
20. K. Koga and H. Ohigashi, "Piezoelectricity and related properties of vinylidene fluoride and trifluoroethylene copolymers," J. Appl. Phys., vol.59, no.6, pp. 2142-2150, Mar. 1986.