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Volumn 95, Issue 1, 2009, Pages

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In-Ga-Zn-O thin-film transistors

b NONE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED DEFECTS; CONSTANT CURRENT STRESS; ROOM TEMPERATURE; SHALLOW TRAPS; SUBTHRESHOLD; THERMAL-ANNEALING; THRESHOLD VOLTAGE SHIFTS; VOLTAGE SWINGS;

ANNEALING; GALLIUM; THRESHOLD VOLTAGE; ZINC;

THIN FILM TRANSISTORS;

EID: 67650474594 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3159831 Document Type: Article

Times cited : (367)

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