Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 11, 2003, Pages 6955-6959

  Lee, Nam Yeal ^a   Yoon, Sung Min ^a   You, In Kyu ^a   Ryu, Sang Ouk ^a   Cho, Seong Mok ^a   Shin, Woong Chul ^a   Choi, Kyu Jung ^a   Kim, Kwi Dong ^a   Yu, Byoung Gon ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

BLT; Buffer layer; Crystallographic orientation; Ferroelectric memory; MFIS structure; ONO; RTA; Sol gel

Indexed keywords

CAPACITORS; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ELECTRIC POTENTIAL; FABRICATION; FERROELECTRIC THIN FILMS; LOW TEMPERATURE EFFECTS; SILICA; SOL-GELS; SPIN COATING; TRANSISTORS;

FERROELECTRIC MEMORY;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 1642454655     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6955     Document Type: Article

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