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Volumn 42, Issue 11, 2003, Pages 6955-6959
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Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures
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Author keywords
BLT; Buffer layer; Crystallographic orientation; Ferroelectric memory; MFIS structure; ONO; RTA; Sol gel
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Indexed keywords
CAPACITORS;
CRYSTAL ORIENTATION;
CRYSTALLOGRAPHY;
ELECTRIC POTENTIAL;
FABRICATION;
FERROELECTRIC THIN FILMS;
LOW TEMPERATURE EFFECTS;
SILICA;
SOL-GELS;
SPIN COATING;
TRANSISTORS;
FERROELECTRIC MEMORY;
SEMICONDUCTING BISMUTH COMPOUNDS;
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EID: 1642454655
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.42.6955 Document Type: Article |
Times cited : (2)
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References (15)
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