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Volumn 42, Issue 11, 2003, Pages 6955-6959

Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures

Author keywords

BLT; Buffer layer; Crystallographic orientation; Ferroelectric memory; MFIS structure; ONO; RTA; Sol gel

Indexed keywords

CAPACITORS; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ELECTRIC POTENTIAL; FABRICATION; FERROELECTRIC THIN FILMS; LOW TEMPERATURE EFFECTS; SILICA; SOL-GELS; SPIN COATING; TRANSISTORS;

EID: 1642454655     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6955     Document Type: Article
Times cited : (2)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.