Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 504-507

  Henkel, K ^a   Lazareva, I ^b   Mandal, D ^a   Paloumpa, I ^a   Muller K ^a   Koval, Y ^b   Muller P ^b   Schmeisser D ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; FIELD EFFECT TRANSISTORS; TIME MEASUREMENT;

APPLIED BIAS; CAPACITOR STRUCTURES; FERROELECTRIC FIELD EFFECT TRANSISTORS; FERROELECTRIC LAYERS; FERROELECTRIC POLYMERS; MEMORY CELLS; NON DESTRUCTIVE READOUTS; NON VOLATILES; ORGANIC NONVOLATILE MEMORIES; OXIDE CAPACITANCES; POLY-VINYLIDENE FLUORIDES; TRIFLUOROETHYLENE;

FERROELECTRICITY;

EID: 59949090118     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3043476     Document Type: Article

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