Adaptive-learning neuron integrated circuits using metal-ferroelectric (SrBi2Ta2O9)-semiconductor (MFS) FET's

IEEE Electron Device Letters

Volumn 20, Issue 10, 1999, Pages 526-528

  Yoon, Sung Min ^a   Tokumitsu, Eisuke ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FERROELECTRIC MATERIALS; LEARNING SYSTEMS; NEURAL NETWORKS; SILICON ON INSULATOR TECHNOLOGY; STRONTIUM COMPOUNDS;

ADAPTIVE LEARNING NEURON CIRCUITS; COMPLEMENTARY UNIJUNCTION TRANSISTORS (CUJT); LIQUID SOURCE MISTED CHEMICAL DEPOSITION (LSMCD) METHODS; METAL FERROELECTRIC SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MFSFET);

MESFET DEVICES;

EID: 0033334929     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.791931     Document Type: Article

References (8)

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8. 9 thin films," IEEE Electron Device Lett., vol. 20, pp. 229-231, May 1999.