A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

IEEE Journal of Solid-State Circuits

Volumn 43, Issue 1, 2008, Pages 150-162

  Lee, Kwang Jin ^a   Cho, Beak Hyung ^a   Cho, Woo Yeong ^a   Kang, Sangbeom ^a   Choi, Byung Gil ^a   Oh, Hyung Rok ^a   Lee, Chang Soo ^a   Kim, Hye Jin ^a   Park, Joon Min ^a   Wang, Qi ^a   Park, Mu Hui ^a   Ro, Yu Hwan ^a   Choi, Joon Yong ^a   Kim, Ki Sung ^a   Kim, Young Ran ^a   Shin, In Cheol ^a   Lim, Ki Won ^a   Cho, Ho Keun ^a   Choi, Chang Han ^a   Chung, Won Ryul ^a   Kim, Du Eung ^a   Yoon, Yong Jin ^a   Yu, Kwang Suk ^a   Jeong, Gi Tae ^a   Jeong, Hong Sik ^a   Kwak, Choong Keun ^a   Kim, Chang Hyun ^a   Kim, Kinam ^a   more..

^a SAMSUNG Electronics   (South Korea)

Author keywords

Charge pump; data endurance; data retention; diode switch; MOS switch; phase change random access memory (PRAM); phase change memory; SEG technology; slow quench; write verify

Indexed keywords

EID: 85008054314     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.2007.908001     Document Type: Article

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