Investigating addition effect of hafnium in InZnO thin film transistors using a solution process

Applied Physics Letters

Volumn 96, Issue 9, 2010, Pages

  Jeong, Woong Hee ^a   Kim, Gun Hee ^a   Shin, Hyun Soo ^a   Du Ahn, Byung ^a   Kim, Hyun Jae ^a   Ryu, Myung Kwan ^b   Park, Kyung Bae ^b   Seon, Jong Baek ^b   Lee, Sang Yoon ^b  

^a Yonsei University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION EFFECT; ATOMIC CONCENTRATION; CARRIER GENERATION; ELECTRICAL CHARACTERISTIC; GAINZNO; HIGH AFFINITY; SOLUTION PROCESS; SUBTHRESHOLD SWING; TRAP DENSITY;

GALLIUM; OXYGEN; THIN FILM TRANSISTORS; THIN FILMS;

HAFNIUM;

EID: 77949403980     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3340943     Document Type: Article

References (13)

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