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Applied Physics Letters

Volumn 95, Issue 22, 2009, Pages

Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

(6) Park, C H a Im, Seongil a Yun, Jungheum b Lee, Gun Hwan b Lee, Byoung H c Sung, Myung M c

a Yonsei University (South Korea)

b Korea Institute of Material Science (South Korea)

c Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC LAYERS; FERROELECTRIC POLYMERS; GATE ELECTRODES; GATED DEVICES; INDIUM ZINC OXIDES; LOW VOLTAGES; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY TRANSISTORS; PHOTOSTABLE; RETENTION PROPERTIES; RF-SPUTTERING; TOP-GATE; ZNO;

SEMICONDUCTING ZINC COMPOUNDS; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

FERROELECTRICITY;

EID: 71949122446 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3269576 Document Type: Article

Times cited : (34)

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