Metal-ferroelectric-semiconductor (MFS) FET's using LiNbO 3/Si (100) structures for nonvolatile memory application

IEEE Electron Device Letters

Volumn 19, Issue 6, 1998, Pages 204-206

  Kim, Kwang Ho ^a,b  

^a IEEE   (South Korea)

^b Chongju University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRON TRANSPORT PROPERTIES; FERROELECTRIC DEVICES; LITHIUM COMPOUNDS; NONVOLATILE STORAGE; TRANSCONDUCTANCE;

METAL FERROELECTRIC SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MFSFET);

FIELD EFFECT TRANSISTORS;

EID: 0032094706     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.678545     Document Type: Article

References (6)

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3. D. R. Lampe, D. A. Adams, M. Austin, M. Polinsky, J. Dzimianski, S. Sinharoy, H. Buhay, P. Brabant, and Y. M. Liu, "Process integration of the ferroelectric memory FET's (FEMFET's) for NDRO FERRAM," Ferroelectrics, vol. 133, pp. 61-72, 1992.
4. 4-Silicon capacitor by rapid thermal annealing," Appl. Phys. Lett., vol. 66, no. 23, pp. 3143-3145, 1995.
5. 4 on Si(100), (110), and (111) substrates by post-deposition rapid thermal annealing," Jpn. J. Appl. Phys., vol. 35, no. 2B, pp. 1557-1559, 1996.
6. K.-H. Kim, S.-W. Lee, J.-S. Lyu, B.-W. Kim, and H. J. Yoo, "Properties of lithium niobate thin films by RF magnetron sputtering with wafer target," J. Korean Phys. Soc., vol. 32, pp. s1506-s1508, 1998.