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Electrochemical and Solid-State Letters

Volumn 13, Issue 8, 2010, Pages

Effect of double-layered Al2O3 gate insulator on the bias stability of ZnO thin film transistors

(5) Yoon, Sung Min a Ko Park, Sang Hee a Yang, Shin Hyuk a Byun, Chun Won a Hwang, Chi Sun a

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STABILITY; BIAS STRESS; GATE INSULATOR; HIGH-QUALITY INTERFACE; INTER-DIFFUSION; PROTECTION LAYERS; STRESS FIELD; ZNO; ZNO THIN FILM;

ATOMIC LAYER DEPOSITION; METALLIC FILMS; OPTICAL FILMS; THIN FILMS; WATER VAPOR; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77953598628 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3428745 Document Type: Article

Times cited : (11)

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