A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators

IEEE Transactions on Electron Devices

Volumn 55, Issue 5, 2008, Pages 1109-1115

  Cross, R B M ^a   De Souza, Maria Merlyne ^b   Deane, S C ^c   Young, Nigel D ^c  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Charge trapping; Stability; Thin film transistors (TFTs); Zinc oxide (ZnO)

Indexed keywords

CHARGE TRAPPING; ELECTRIC INSULATORS; ENERGY GAP; GATES (TRANSISTOR); SILICA; THERMAL EFFECTS; THRESHOLD VOLTAGE; ZINC OXIDE;

CHANNEL MOBILITY; GATE BIAS STRESS; GATE INSULATORS;

THIN FILM TRANSISTORS;

EID: 43749113176     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.918662     Document Type: Article

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