Electrical characteristics of metal-ferroelectric (BiFe O3)-insulator (Y2 O3)-semiconductor capacitors and field-effect transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 369-372

  Lin, Chih Ming ^a   Shih, Wen Chieh ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DATA STORAGE EQUIPMENT; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; FERROELECTRICITY; HYSTERESIS; OZONE WATER TREATMENT; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR MATERIALS; TRANSISTORS;

APPLIED VOLTAGES; CAPACITANCE VOLTAGES; CLOCKWISE HYSTERESIS LOOPS; ELECTRICAL CHARACTERISTICS; FERROELECTRIC POLARIZATIONS; FIELD EFFECTS; LOW-LEAKAGE CURRENTS; MEMORY WINDOWS; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; SEMICONDUCTOR CAPACITORS; SUB THRESHOLD SLOPES; VOLTAGE RANGES;

FIELD EFFECT TRANSISTORS;

EID: 59949103043     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3058727     Document Type: Article

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