A ferroelectric transparent thin-film transistor

Applied Physics Letters

Volumn 68, Issue 25, 1996, Pages 3650-3652

  Prins, M W J ^a   Grosse Holz, K O ^a   Muller G ^a   Cillessen, J F M ^a   Giesbers, J B ^a   Weening, R P ^a   Wolf, R M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; FERROELECTRIC MATERIALS; HYSTERESIS; POLARIZATION; PULSED LASER APPLICATIONS; RELAXATION PROCESSES; SEMICONDUCTING LEAD COMPOUNDS; STRONTIUM COMPOUNDS; SWITCHING; TIN COMPOUNDS;

CHARGE TRAPPING; LEAD ZIRCONYL TITANATE; PULSED LASER DEPOSITION; STRONTIUM RUTHENIUM OXIDE; TIN DIOXIDE;

THIN FILM TRANSISTORS;

EID: 0030168131     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115759     Document Type: Article

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