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Volumn 11, Issue 11, 2010, Pages 1746-1752

Nonvolatile memory transistors using solution-processed zinc-tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene)

(7) Yoon, Sung Min a,b Jung, Soon Won a Yang, Shin Hyuk a Byun, Chun Won a Hwang, Chi Sun a Ko Park, Sang Hee a Ishiwara, Hiroshi b,c

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

c Konkuk University (South Korea)

Author keywords

Nonvolatile memory transistor; Oxide semiconductor; P(VDF TrFE); Solution process; Zn Sn O

Indexed keywords

AMORPHOUS FILMS; ANNEALING; FERROELECTRIC MATERIALS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; FLUORINE COMPOUNDS; NONVOLATILE STORAGE; OXIDE SEMICONDUCTORS; THIN FILM TRANSISTORS; THIN FILMS;

ELECTRICAL CONDUCTIVITY; FERROELECTRIC GATE INSULATORS; FIELD-EFFECT MOBILITIES; NON-VOLATILE MEMORY TRANSISTORS; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE); PVDF-TRFE; SOLUTION PROCESS; ZN-SN-O;

TIN OXIDES;

EID: 77955986230 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2010.08.002 Document Type: Article

Times cited : (18)

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