Investigation of the reliability behavior of conductive-bridging memory cells

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 876-878

  Symanczyk, Ralf ^a   Bruchhaus, Rainer ^a   Dittrich, Rok ^a   Kund, Michael ^a  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

CBRAM; Chalcogenide; Nonvolatile memory; Reliability; Retention

Indexed keywords

ACTIVE MATRIXES; CBRAM; DATA RETENTION; ELECTRICAL BIAS; EXPERIMENTAL DATA; MEMORY CELL; MEMORY DEVICE; NON-VOLATILE-MEMORY APPLICATIONS; NONVOLATILE MEMORY; RELIABILITY BEHAVIOR; REPRODUCIBILITIES; RESISTANCE STATE; RETENTION; TEMPERATURE RANGE; TEST SCHEME;

ACTIVATION ENERGY; SILVER;

RELIABILITY;

EID: 68249141780     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2024623     Document Type: Article

References (9)

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