Nonvolatile memory devices based on few-layer graphene films

Nanotechnology

Volumn 21, Issue 10, 2010, Pages

  Doh, Yong Joo ^a,b   Yi, Gyu Chul ^c  

^a Korea University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BI-STABILITY; CHARGE-SCREENING EFFECTS; ELECTRICAL CHARACTERISTIC; FERROELECTRIC POLYMERS; FIELD-EFFECT DEVICES; GRAPHENES; HIGHLY SENSITIVE; NON-VOLATILE; NONVOLATILE MEMORY DEVICES; POLARIZATION SWITCHING; RESISTANCE CHANGE; RETENTION PROPERTIES;

CHEMICAL SENSORS; GRAPHITE; NONVOLATILE STORAGE;

GRAPHENE;

EID: 77149125544     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/10/105204     Document Type: Article

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