Ferroelectric switching dynamics in VDF-TrFE copolymer thin films spin coated on Si substrate

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Furukawa, T ^a   Kanai, S ^a   Okada, A ^a   Takahashi, Y ^a   Yamamoto, R ^b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b Gunma Prefectural Industrial Technology Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COMPENSATIONS; CONSTANT CURRENTS; COPOLYMER THIN FILMS; DEPLETION LAYERS; DOUBLE FREQUENCIES; FERROELECTRIC POLARIZATIONS; FERROELECTRIC SWITCHING; HIGH FREQUENCIES; HIGH VOLTAGES; LINEAR RELATIONSHIPS; LOW FREQUENCIES; LOW VOLTAGES; MAJORITY CARRIERS; METAL CAPACITORS; MINORITY CARRIER GENERATIONS; NEGATIVE VOLTAGES; POLARIZATION SWITCHING; SI LAYERS; SI SUBSTRATES; SIMULTANEOUS MEASUREMENTS; SWITCHING DYNAMICS; TRIFLUOROETHYLENE COPOLYMERS; VINYLIDENE FLUORIDES;

CAPACITANCE; CAPACITORS; COPOLYMERIZATION; DC GENERATORS; DYNAMICS; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; LITHIUM BATTERIES; POLARIZATION; POLYMERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPIN DYNAMICS; SWITCHING;

FERROELECTRIC FILMS;

EID: 63749083605     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3055411     Document Type: Article

References (17)

1. N. Yamauchi, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.25.590 25, 590 (1986).
2. M. Date, T. Furukawa, T. Yamaguchi, A. Kojima, and I. Shibata, IEEE Trans. Electr. Insul. 24, 534 (1989). 0018-9367
3. R. Yamamoto, K. Sanada, and S. Umemura, Jpn. J. Appl. Phys., Part 1 33, 5829 (1994). 0021-4922
4. R. Yamamoto, K. Sanada, and S. Umemura, Jpn. J. Appl. Phys., Part 1 35, 5284 (1996). 0021-4922
5. T. J. Reece, S. Ducharme, A. V. Sorokin, and M. Poulsen, Appl. Phys. Lett. 0003-6951 10.1063/1.1533844 82, 142 (2003).
6. S. H. Lim, A. C. Rastogi, and S. B. Desu, J. Appl. Phys. 0021-8979 10.1063/1.1785836 96, 5673 (2004).
7. R. C. G. Naber, B. de Boer, P. W. M. Blom, and D. M. de Leeuw, Appl. Phys. Lett. 0003-6951 10.1063/1.2132062 87, 203509 (2005).
8. R. C. G. Naber, A. W. Marsman, M. Spijkman, K. Asadi, P. W. M. Blom, and D. M. de Leeuw, Appl. Phys. Lett. 0003-6951 10.1063/1.2713856 90, 113509 (2007).
9. S. Fujisaki, Y. Fujisaki, and H. Ishihara, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 0885-3010 10.1109/TUFFC.2007.583 54, 2592 (2007).
10. T. Furukawa, Phase Transitions 0141-1594 10.1080/01411598908206863 18, 143 (1989).
11. K. Kimura and H. Ohigashi, J. Appl. Phys. 25, 383 (1986). 0021-8979
12. Q. M. Zhang, H. Xu, F. Fang, Z. -Y. Cheng, F. Xia, and H. You, J. Appl. Phys. 0021-8979 10.1063/1.1344585 89, 2613 (2001).
13. T. Furukawa, S. Sakai, and Y. Takahashi, Mater. Res. Soc. Symp. Proc. 698, 71 (2001).
14. T. Nakajima, R. Abe, Y. Takahashi, and T. Furukawa, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.44.L1385 44, L1385 (2005).
15. T. Furukawa, K. Nakajima, T. Koizumi, and M. Date, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.26.1039 26, 1039 (1987).
16. T. Furukawa, H. Matsuzaki, M. Shiina, and Y. Tajitsu, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.24.L661 24, L661 (1985).
17. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).