High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

Applied Physics Letters

Volumn 91, Issue 11, 2007, Pages

  Jeong, Jae Kyeong ^a   Jeong, Jong Han ^a   Yang, Hui Won ^a   Park, Jin Seong ^a   Mo, Yeon Gon ^a   Kim, Hye Dong ^a  

^a Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ELECTRON TRAPS; GATES (TRANSISTOR); INDIUM COMPOUNDS; SPUTTERING; THRESHOLD VOLTAGE;

FIELD EFFECT MOBILITY; INTERFACE TRAP DENSITY; SUBTHRESHOLD GATE SWING;

THIN FILM TRANSISTORS;

EID: 34548684568     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2783961     Document Type: Article

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