Fabrication of ferroelectric gate memory device using BLT/HfO 2/Si gate structure

Integrated Ferroelectrics

Volumn 52, Issue , 2003, Pages 195-203

  Yoon, Sung Min ^a   You, In Kyu ^a   Lee, Nam Yeal ^a   Kim, Kwi Dong ^a   Cho, Seong Mok ^a   Ryu, Sang Ouk ^a   Shin, Woong Chul ^a   Choi, Kyu Jung ^a   Yu, Byoung Gon ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

(Bi,La)4Ti3O12; Ferroelectric gate FET; HfO2; Memory device; MFIS

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SILICON WAFERS;

(BI,LA)4TI3O12; FERROELECTRIC-GATE FETS; HFO2; MFIS;

DATA STORAGE EQUIPMENT;

EID: 33751173878     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580390254538     Document Type: Article

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