Formation and characteristics of Pb(Zr,Ti)O3 field-effect transistor with a SiO2 buffer layer

Applied Physics Letters

Volumn 70, Issue 4, 1997, Pages 490-492

  Yu, Jun ^a   Hong, Zhaojian ^a   Zhou, Wenli ^a   Cao, Guangjun ^a   Xie, Jifan ^a   Li, Xingjiao ^a   Li, Shaoping ^b   Li, Zhuang ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 8644276358     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118190     Document Type: Article

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