Effect of NO(Si3N4/SiO2) layers on the electrical properties of MFISFET using SBT(SrBi2Ta2O9) materials

Integrated Ferroelectrics

Volumn 33, Issue 1-4, 2001, Pages 177-184

  You, In Kyu ^a   Lee, Won Jae ^a   Yang, Il Suk ^a   Yu, Byoung Gon ^a   Cho, Kyoung Ik ^a   Kim, Shi Ho ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Wonkwang University   (South Korea)

Author keywords

Ferroelectric; MFISFET; SBT; Si3N4; Single transistor

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; MAGNETIC HYSTERESIS; NITROGEN COMPOUNDS; TEMPERATURE; THRESHOLD VOLTAGE;

DRAIN CURRENT; MEMORY WINDOW; SINGLE FERROELECTRIC FIELD EFFECT TRANSISTOR; SINGLE TRANSISTOR;

STRONTIUM COMPOUNDS;

EID: 0035036778     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584580108222299     Document Type: Conference Paper

References (6)