The improvement of retention time of metal-ferroelectric (PbZr 0.53Ti0.47O3)-insulator (Y2O 3) -semiconductor transistors by surface treatments

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Shih, Wen Chieh ^a   Kang, Kun Yung ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRIC INSULATORS; LEAKAGE CURRENTS; SILICON; THRESHOLD VOLTAGE; TRANSISTORS;

DRAIN CURRENT RATIO; SEMICONDUCTOR TRANSISTORS;

FERROELECTRIC MATERIALS;

EID: 36849007367     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2822809     Document Type: Article

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