Metal-ferroelectric (BiFeO3) -insulator (Y2 O 3) -semiconductor capacitors and field effect transistors for nonvolatile memory applications

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Lin, Chih Ming ^a   Shih, Wen Chieh ^a   Chang, Ingram Yin Ku ^a   Juan, Pi Chun ^b   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; CAPACITANCE VOLTAGES; CAPACITANCE-VOLTAGE CURVES; LEAKAGE CURRENT DENSITIES; MEMORY WINDOWS; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; NON-VOLATILE MEMORY APPLICATIONS; ON/OFF RATIOS; SEMICONDUCTOR CAPACITORS; THREE ORDERS OF MAGNITUDES; VOLTAGE RANGES;

CAPACITANCE; CAPACITORS; DATA STORAGE EQUIPMENT; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; FERROELECTRICITY; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; WINDOWS;

FIELD EFFECT TRANSISTORS;

EID: 64349085846     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3114403     Document Type: Article

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