Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors

Applied Physics Letters

Volumn 90, Issue 8, 2007, Pages

  Yildirim, F A ^a   Ucurum, C ^a   Schliewe, R R ^a   Bauhofer, W ^a   Meixner, R M ^b   Goebel, H ^b   Krautschneider, W ^a  

^a HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b HELMUT SCHMIDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM TITANATE; CONDUCTIVE FILMS; COPOLYMERS; ELECTRIC INSULATION; HYSTERESIS; NANOSTRUCTURED MATERIALS; PERMITTIVITY;

COMPOSITE FILMS; MEMORY EFFECTS; NANOPOWDERS; ORGANIC FIELD EFFECT TRANSISTORS (OFET);

GATES (TRANSISTOR);

EID: 33847191330     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2591314     Document Type: Article

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