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Applied Physics Letters

Volumn 96, Issue 21, 2010, Pages

Addition of aluminum to solution processed conductive indium tin oxide thin film for an oxide thin film transistor

(5) Jeon, J H a Hwang, Y H a Bae, B S a Kwon, H L b Kang, H J b

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Chungbuk National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; BAND GAPS; CHANNEL LAYERS; CRYSTALLINE THIN FILMS; HIGH MOBILITY; INDIUM TIN OXIDE THIN FILMS; OXIDE THIN FILMS; SOLUTION-PROCESSED; SUBTHRESHOLD SWING; SYSTEMATIC VARIATION;

ALUMINUM; AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; INDIUM COMPOUNDS; PHOTOLITHOGRAPHY; THIN FILM TRANSISTORS; THIN FILMS; TIN; TIN OXIDES; TITANIUM COMPOUNDS; VAPOR DEPOSITION;

INDIUM;

EID: 77956239368 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3442482 Document Type: Article

Times cited : (47)

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