High-performance solution-processed polymer ferroelectric field-effect transistors

Nature Materials

Volumn 4, Issue 3, 2005, Pages 243-248

  Naber, Ronald C G ^a   Tanase, Cristina ^a   Blom, Paul W M ^a   Gelinck, Gerwin H ^b   Marsman, Albert W ^b   Touwslager, Fred J ^b   Setayesh, Sepas ^b   De Leeuw, Dago M ^b  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC BREAKDOWN; FERROELECTRIC DEVICES; FLUORINE CONTAINING POLYMERS; GATES (TRANSISTOR); INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOS DEVICES; PARAMETER ESTIMATION; SEMICONDUCTING ORGANIC COMPOUNDS; SWITCHING;

DIELECTRIC BREAKDOWN; FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET); GATE FIELDS; SEMICONDUCTOR INTERFACES;

FIELD EFFECT TRANSISTORS;

EID: 14744284800     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat1329     Document Type: Article

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