Five-day-long ferroelectric memory effect in Pt/(Bi,La)4Ti 3O12/HfO2/Si structures

Applied Physics Letters

Volumn 85, Issue 19, 2004, Pages 4448-4450

  Park, Byung Eun ^a,b   Takahashi, Kazuhiro ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b University of Seoul   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC INSULATORS; ELECTRON BEAMS; EVAPORATION; FERROELECTRIC MATERIALS; HAFNIUM COMPOUNDS; HYSTERESIS; SUBSTRATES; THIN FILMS;

ELECTRON-BEAM EVAPORATION; FERROELECTRIC GATES; FERROELECTRIC MEMORY EFFECTS; MEMORY WINDOW;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 10844246328     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814437     Document Type: Conference Paper

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