A new metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor (MFIS) FET for nonvolatile memory applications

IEEE Electron Device Letters

Volumn 27, Issue 4, 2006, Pages 217-220

  Juan, Trevor Pi Chun ^a   Chang, Chung Yuan ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Data retention; Dy2O3; High ; Memory window; Metal ferroelectric insulator semiconductor (MFIS) transistors

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRON MOBILITY; FERROELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING LEAD COMPOUNDS;

CAPACITANCE-VOLTAGE CURVES; DATA RETENTION; MEMORY WINDOW; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR (MFIS) TRANSISTORS;

MIS DEVICES;

EID: 33645644997     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.870414     Document Type: Article

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