Fabrication and characterization of sub-micron metai-ferroelectric-insulator-semiconductor field effect transistors with Pt/Pb5Ge3O11/ZrO2/Si structure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 6 B, 2001, Pages

  Zhang, F ^a   Hsu, S T ^a   Ono, Y ^a   Ulrich, B ^a   Zhuang, W ^a   Ying, H ^a   Stecker, L ^a   Evans, D R ^a   Maa, J ^a  

^a SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

FeRAM; High k; MFIS FETs; Pb5Ge3O11; Single transistor; ZrO2

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC INSULATORS; FERROELECTRIC MATERIALS; HEAT TREATMENT; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR (MFIS) STRUCTURES;

FIELD EFFECT TRANSISTORS;

EID: 0035874849     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l635     Document Type: Article

References (14)