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Volumn 86, Issue 16, 2005, Pages 1-3
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Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability
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Author keywords
[No Author keywords available]
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Indexed keywords
CONDUCTIVE MATERIALS;
ELECTRODES;
FERROELECTRIC MATERIALS;
INDIUM COMPOUNDS;
POLARIZATION;
SILICA;
SINGLE CRYSTALS;
CHERGE CONTROLLABILITY;
FERROELECTRIC-GATE THIN FILM TRANSISTORS;
INDIUM-TIN-OXIDE CHANNELS;
ON/OFF CURRENT RATIO;
THIN FILM TRANSISTORS;
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EID: 20944432228
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1905800 Document Type: Article |
Times cited : (132)
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References (10)
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