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Applied Physics Letters

Volumn 93, Issue 9, 2008, Pages

Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

(4) Lee, Jeong Min a Cho, In Tak a Lee, Jong Ho a Kwon, Hyuck In b

a Kyungpook National University (South Korea)

b Daegu University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; GALLIUM; INDIUM; INJECTION (OIL WELLS); MOSFET DEVICES; THICK FILMS; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; TURBULENT FLOW; ZINC; ZINC OXIDE;

ELECTRON-INJECTION; EXPONENTIAL EQUATIONS; STRESS-INDUCED;

THRESHOLD VOLTAGE;

EID: 51349141239 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2977865 Document Type: Article

Times cited : (553)

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