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Volumn 96, Issue 19, 2010, Pages

Thin-film transistors based on p-type Cu2 O thin films produced at room temperature

(9) Fortunato, Elvira a Figueiredo, Vitor a Barquinha, Pedro a Elamurugu, Elangovan a Barros, Raquel a,b Goņalves, Goņalo a Park, Sang Hee Ko c Hwang, Chi Sun c Martins, Rodrigo a

a Center of Excellence in Microelectronics Optoelectronics and Processes (Portugal)

b INNOVNANO (Portugal)

c Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM GATE; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; ON/OFF RATIO; P-TYPE; POLYCRYSTALLINE STRUCTURE; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; TRANSPARENT THIN FILM TRANSISTOR;

MAGNETRON SPUTTERING; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS;

COPPER;

EID: 77952959792 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3428434 Document Type: Article

Times cited : (177)

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