SCOPUS 정보 검색 플랫폼

Volumn 17, Issue 5, 2005, Pages 590-594

Fully transparent ZnO thin-film transistor produced at room temperature

(7) Fortunato, Elvira M C a Barquinha, Pedro M C a Pimentel, Ana C M B G a Gonçalves, Alexandra M F a Marques, António J S a Pereira, Luís M N a Martins, Rodrigo F P a

a UNIVERSIDADE NOVA DE LISBOA (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRON MOBILITY; FABRICATION; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; OXYGEN; POLYCRYSTALLINE MATERIALS; SUBSTRATES; THERMAL EFFECTS; ZINC OXIDE;

CRYSTALLINITY FRACTION; HEXAGONAL STRUCTURE; NANOCRYSTALS; OXYGEN VACANCIES;

THIN FILM TRANSISTORS;

EID: 16244382410 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.200400368 Document Type: Article

Times cited : (885)

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