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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2119-2124

Improvement of memory retention characteristics in ferroelectric neuron circuits using a Pt/SrBi2Ta2O9/Pt/Ti/SiO2/Si structure-field effect transistor as a synapse device

(3) Yoon, Sung Min a Tokumitsu, Eisuke a Ishiwara, Hiroshi a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Adaptive learning function; Ferroelectric neuron circuit; Memory retention; SrBi2Ta2O9 thin film

Indexed keywords

ADAPTIVE SYSTEMS; CIRCUIT OSCILLATIONS; CMOS INTEGRATED CIRCUITS; NEURAL NETWORKS; NONVOLATILE STORAGE; PLATINUM; PULSE MODULATION; SEMICONDUCTING SILICON; SILICA; SILICON ON INSULATOR TECHNOLOGY; STRONTIUM COMPOUNDS; THIN FILMS;

ADAPTIVE LEARNING FUNCTION; FERROELECTRIC ANALOG MEMORY; FERROELECTRIC NEURON CIRCUITS; MEMORY RETENTION; SILICON ON INSULATOR STRUCTURE; SYNAPSE DEVICE;

MOSFET DEVICES;

EID: 0033707486 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.2119 Document Type: Article

Times cited : (47)

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