메뉴 건너뛰기




Volumn 515, Issue 24 SPEC. ISS., 2007, Pages 8748-8751

Ferroelectric field-effect transistor based on transparent oxides

Author keywords

Clockwise hysteresis; Intergrain boundaries; Single crystal tin dioxide; Transparent ferroelectric field effect transistor

Indexed keywords

FERROELECTRIC THIN FILMS; GRAIN BOUNDARIES; HETEROJUNCTIONS; HYSTERESIS; LEAD ALLOYS; PULSED LASER DEPOSITION; SINGLE CRYSTALS;

EID: 34548857346     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.03.114     Document Type: Article
Times cited : (9)

References (15)
  • 6
    • 34548854587 scopus 로고    scopus 로고
    • E. Tokumitsu, M. Senoo, E. Shin, Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation. Boston, U.S.A., Fall meeting 2005, Materials Research Society Symposium Proceedings 902E (2006) 0902-T10-54.1.
  • 12
    • 34548837830 scopus 로고    scopus 로고
    • T.P. Ma, J.-P. Han, U.S. Patent No. 6,067,244 (2000).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.