Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors

Applied Physics Letters

Volumn 85, Issue 15, 2004, Pages 3199-3201

  Aizawa, Koji ^a   Park, Byung Eun ^b,c   Kawashima, Yoshihito ^a   Takahashi, Kazuhiro ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b R and D Assoc Fut Electron Devices   (Japan)

^c University of Seoul   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER STORAGE; CAPACITANCE; DIODES; ELECTRIC POTENTIAL; ELECTRON BEAMS; FERROELECTRIC THIN FILMS; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; RANDOM ACCESS STORAGE; REACTIVE ION ETCHING; SILICON ON INSULATOR TECHNOLOGY; SOL-GELS; THERMODYNAMIC STABILITY;

BUFFER LAYERS; DATA RETENTION; GATE STACK; TRAP DENSITY;

MOSFET DEVICES;

EID: 8644248309     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1806274     Document Type: Article

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