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Applied Physics Letters

Volumn 94, Issue 16, 2009, Pages

Gate-controlled nonvolatile graphene-ferroelectric memory

(7) Zheng, Yi a Ni, Guang Xin a Toh, Chee Tat a Zeng, Ming Gang a Chen, Shu Ting b Yao, Kui b Özyilmaz, Barbaros a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY INFORMATIONS; ELECTRIC DIPOLES; EXPERIMENTAL OBSERVATIONS; FERROELECTRIC MEMORIES; FIELD EFFECTS; GATE VOLTAGES; GRAPHENE; HYBRID DEVICES; LOW-RESISTANCE STATE; NON VOLATILE MEMORY DEVICES; NONVOLATILE; RESISTANCE CHANGES; TRANSISTOR STRUCTURES;

DOPING (ADDITIVES); FERROELECTRIC THIN FILMS;

FERROELECTRICITY;

EID: 65449143255 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3119215 Document Type: Article

Times cited : (248)

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