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Volumn 157, Issue 7, 2010, Pages

Electrical characterization of metal-insulator-semiconductor capacitors having double-layered atomic-layer-deposited Al2 O3 and ZnO for transparent thin film transistor applications

(5) Yoon, Sung Min a Park, Sang Hee Ko a Byun, Chun Won a Yang, Shin Hyuk a Hwang, Chi Sun a

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; C-V MEASUREMENT; CAPACITANCE VOLTAGE MEASUREMENTS; ELECTRICAL BEHAVIORS; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; FLAT-BAND VOLTAGE; GATE INSULATOR; IN-SITU; METAL INSULATOR SEMICONDUCTOR CAPACITORS; OXYGEN SOURCES; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POSITIVE SHIFT; PROTECTION LAYERS; SEMICONDUCTING LAYER; TRANSPARENT THIN FILM TRANSISTOR; VOLTAGE HYSTERESIS; ZNO; ZNO FILMS; ZNO STRUCTURES;

ALUMINUM; ATOMIC LAYER DEPOSITION; CAPACITANCE; CAPACITORS; FILM PREPARATION; HYSTERESIS; METAL INSULATOR BOUNDARIES; MIS DEVICES; OZONE; PLASMA DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILM TRANSISTORS; WATER VAPOR; ZINC OXIDE;

ATOMS;

EID: 77953171204 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3421680 Document Type: Article

Times cited : (11)

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